Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
September 26, 2006
Patent Application Number
10368630
Date Filed
February 20, 2003
Patent Primary Examiner
Patent abstract
A method of manufacturing a chromeless phase shift mask includes forming a photoresist film pattern on a wafer using a basic form of the chromeless phase shift mask and measuring a specification of the photoresist film pattern. The basic form of the chromeless phase shift mask is isotropically etched to modify the phase shifter of the mask unless the photoresist film pattern specification is within a specified range. Accordingly, an application-specific chromeless phase shift mask can be produced for use in any exposure apparatus and under any exposure condition.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
