US Patent 7112390 Method of manufacturing chromeless phase shift mask
Patent 7112390 was granted and assigned to Samsung on September, 2006 by the United States Patent and Trademark Office.
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Patent abstract
A method of manufacturing a chromeless phase shift mask includes forming a photoresist film pattern on a wafer using a basic form of the chromeless phase shift mask and measuring a specification of the photoresist film pattern. The basic form of the chromeless phase shift mask is isotropically etched to modify the phase shifter of the mask unless the photoresist film pattern specification is within a specified range. Accordingly, an application-specific chromeless phase shift mask can be produced for use in any exposure apparatus and under any exposure condition.
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US Patent 07112390 Method of manufacturing chromeless phase shift mask US Patent 7112390 Method of manufacturing chromeless phase shift mask
Infobox
Patent Number
0711239000
Patent Number
711239000
Edits on 29 Mar, 2023
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071123900
Date of Patent
September 26, 2006
0Patent Application Number
103686300
Date Filed
February 20, 2003
0Official Website
Patent Primary Examiner
Edits on 24 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071123900
Date of Patent
September 26, 2006
0Patent Application Number
103686300
Date Filed
February 20, 2003
0Official Website
Patent Primary Examiner
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US Patent 07112390 Method of manufacturing chromeless phase shift mask
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07112390
Date of patent
September 26, 2006
Patent application number
10368630
Date Filed
February 20, 2003
Patent primary examiner
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