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Patent attributes
Current Assignee
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Patent Jurisdiction
Patent Number
Date of Patent
September 26, 2006
Patent Application Number
10791657
Date Filed
March 2, 2004
Patent Primary Examiner
Patent abstract
A method of making a semiconductor structure includes etching an anti-reflective coating layer at a pressure of 10 millitorr or less; etching a nitride layer with a first nitride etch plasma having a first F:C ratio; and etching the nitride layer with a second nitride etch plasma having a second F:C ratio. The first F:C ratio is greater than the second F:C ratio.
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