US Patent 7112834 Gate etch process
Patent 7112834 was granted and assigned to Cypress Semiconductor Corporation on September, 2006 by the United States Patent and Trademark Office.
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Patent abstract
A method of making a semiconductor structure includes etching an anti-reflective coating layer at a pressure of 10 millitorr or less; etching a nitride layer with a first nitride etch plasma having a first F:C ratio; and etching the nitride layer with a second nitride etch plasma having a second F:C ratio. The first F:C ratio is greater than the second F:C ratio.
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US Patent 07112834 Gate etch process US Patent 7112834 Gate etch process
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Patent Number
0711283400
Patent Number
711283400
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Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
071128340
Date of Patent
September 26, 2006
0Patent Application Number
107916570
Date Filed
March 2, 2004
0Official Website
Patent Primary Examiner
Edits on 27 Sep, 2022
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Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
071128340
Date of Patent
September 26, 2006
0Patent Application Number
107916570
Date Filed
March 2, 2004
0Official Website
Patent Primary Examiner
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US Patent 07112834 Gate etch process
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07112834
Date of patent
September 26, 2006
Patent application number
10791657
Date Filed
March 2, 2004
Patent primary examiner
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