Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Haihong Wang0
Bin Yu0
Date of Patent
September 26, 2006
Patent Application Number
10653227
Date Filed
September 3, 2003
Patent Primary Examiner
Patent abstract
A semiconductor device includes a semiconductor fin formed on an insulator and sidewall spacers formed adjacent the sides of the fin. A gate material layer is formed over the fin and the sidewall spacers and etched to form a gate. The presence of the sidewall spacers causes a topology of the gate material layer to smoothly transition over the fin and the first and second sidewall spacers.
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