Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 3, 2006
Patent Application Number
11184847
Date Filed
July 20, 2005
Patent Primary Examiner
Patent abstract
A semiconductor device comprises; a MOS transistor formed on a semiconductor layer of an SOI substrate in which the semiconductor layer is formed on a semiconductor substrate with intervention of a buried insulating film, and a contact portion for applying to the semiconductor substrate different bias voltages in an operating state and a standby state of a semiconductor circuit including the MOS transistor.
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