US Patent 7115950 Semiconductor device and method of manufacturing the same
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Patent abstract
A semiconductor device comprises; a MOS transistor formed on a semiconductor layer of an SOI substrate in which the semiconductor layer is formed on a semiconductor substrate with intervention of a buried insulating film, and a contact portion for applying to the semiconductor substrate different bias voltages in an operating state and a standby state of a semiconductor circuit including the MOS transistor.
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US Patent 07115950 Semiconductor device and method of manufacturing the same US Patent 7115950 Semiconductor device and method of manufacturing the same
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Patent Number
0711595000
Patent Number
711595000
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Edits on 30 Mar, 2023
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Patent Jurisdiction
Patent Number
071159500
Date of Patent
October 3, 2006
0Patent Application Number
111848470
Date Filed
July 20, 2005
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
071159500
Date of Patent
October 3, 2006
0Patent Application Number
111848470
Date Filed
July 20, 2005
0Official Website
Patent Primary Examiner
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US Patent 07115950 Semiconductor device and method of manufacturing the same
Infobox
Is a
Patent jurisdiction
Patent number
07115950
Date of patent
October 3, 2006
Patent application number
11184847
Date Filed
July 20, 2005
Patent primary examiner
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