Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Nae Hisano0
Yuji Watanabe0
Hiroaki Ikeda0
Hiroyuki Ohta0
Hisashi Tanie0
Ichiro Anjo0
Mitsuaki Katagiri0
Date of Patent
October 10, 2006
0Patent Application Number
110256340
Date Filed
December 28, 2004
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device capable of reducing a temperature increase during operation thereof is provided. In the semiconductor device, an interface chip is stacked on a plurality of stacked semiconductor elements. Both an “Si” interposer and a resin interposer are arranged under the plural semiconductor elements. The Si interposer is arranged between the resin interposer and the plural semiconductor elements. The Si interposer owns a thickness which is thicker than a thickness of a semiconductor element, and also has a linear expansion coefficient which is smaller than a linear expansion coefficient of the resin interposer, and further, is larger than, or equal to linear expansion coefficients of the plural semiconductor elements.
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