US Patent 7125738 Method of fabricating a photosensitive structure
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Patent Inventor Names
Chen-Chiu Hsue0
Ming-Jeng Huang0
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Patent abstract
A method of fabrication of a photosensitive device is disclosed. A substrate with at least an insulator layer formed thereon is provided. The insulator layer comprises a plurality of photoreceiving regions, and a plurality of conductive patterns are formed thereon without covering the photoreceiving regions. A dielectric layer is formed on the insulator and the conductive patterns, and polished by CMP thereof. The dielectric layer comprises a first dielectric layer formed by PECVD and a second dielectric layer formed by HDPCVD.
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US Patent 07125738 Method of fabricating a photosensitive structure US Patent 7125738 Method of fabricating a photosensitive structure
Infobox
Patent Number
071257380
Patent Number
71257380
Edits on 27 Sep, 2022
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Patent Jurisdiction
Patent Number
071257380
Date of Patent
October 24, 2006
0Patent Application Number
109636590
Date Filed
October 14, 2004
0Official Website
Patent Primary Examiner
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US Patent 07125738 Method of fabricating a photosensitive structure
Infobox
Is a
Patent jurisdiction
Patent number
07125738
Date of patent
October 24, 2006
Patent application number
10963659
Date Filed
October 14, 2004
Patent primary examiner
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