Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
November 21, 2006
Patent Application Number
10912632
Date Filed
August 4, 2004
Patent Primary Examiner
Patent abstract
The present invention describes a method of forming a highly doped polysilicon film. According to an embodiment of the present invention, a first silicon film is formed on a substrate. The first silicon film is then doped. Next, a second silicon film is formed on the doped first silicon film. The second silicon film is then doped.
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