US Patent 7138307 Method to produce highly doped polysilicon thin films
Patent 7138307 was granted and assigned to Intel on November, 2006 by the United States Patent and Trademark Office.
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Patent abstract
The present invention describes a method of forming a highly doped polysilicon film. According to an embodiment of the present invention, a first silicon film is formed on a substrate. The first silicon film is then doped. Next, a second silicon film is formed on the doped first silicon film. The second silicon film is then doped.
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US Patent 07138307 Method to produce highly doped polysilicon thin films US Patent 7138307 Method to produce highly doped polysilicon thin films
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Patent Number
0713830700
Patent Number
713830700
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Official Website
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071383070
Date of Patent
November 21, 2006
0Patent Application Number
109126320
Date Filed
August 4, 2004
0Official Website
Patent Primary Examiner
Edits on 24 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071383070
Date of Patent
November 21, 2006
0Patent Application Number
109126320
Date Filed
August 4, 2004
0Official Website
Patent Primary Examiner
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US Patent 07138307 Method to produce highly doped polysilicon thin films
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07138307
Date of patent
November 21, 2006
Patent application number
10912632
Date Filed
August 4, 2004
Patent primary examiner
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