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US Patent 7139632 Enhanced process and profile simulator algorithms

Patent 7139632 was granted and assigned to Lam Research on November, 2006 by the United States Patent and Trademark Office.

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Patent Citations Received
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US Patent 11921433 Optical metrology in machine learning to characterize features
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Patent Inventor Names
David Cooperberg0
Vahid Vahedi0
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Patent abstract

A method for enhancing a process and profile simulator algorithm predicts the surface profile that a given plasma process will create. An energetic particle is first tracked. The ion fluxes produced by the energetic particle are then recorded. A local etch rate and a local deposition rate are computed from neutral fluxes, surface chemical coverage, and surface material type that are solved simultaneously.

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Patent Citations Received
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US Patent 11704463 Method of etch model calibration using optical scatterometry
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=071396320
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US Patent 07139632 Enhanced process and profile simulator algorithms US Patent 7139632 Enhanced process and profile simulator algorithms

Infobox
Patent Number
071396320
Patent Number
71396320
Edits on 23 Sep, 2022
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Infobox
Is a
Patent
Patent
0
Current Assignee
Lam Research
Lam Research
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
071396320
Date of Patent
November 21, 2006
0
Patent Application Number
109329260
Date Filed
September 1, 2004
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=071396320
Patent Primary Examiner
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Leo Picard
0
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=07139632
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 US Patent 07139632 Enhanced process and profile simulator algorithms

Infobox
Is a
Patent
Patent
Current assignee
Lam Research
Lam Research
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
07139632
Date of patent
November 21, 2006
Patent application number
10932926
Date Filed
September 1, 2004
Patent primary examiner
‌
Leo Picard

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