US Patent 7153775 Conductive material patterning methods
Patent 7153775 was granted and assigned to Micron Technology on December, 2006 by the United States Patent and Trademark Office.
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A patterning method includes providing a first material (e.g., copper) and transforming at a least a surface region of the first material to a second material (e.g., copper oxide). One or more portions of the second material (e.g., copper oxide) are converted to one or more converted portions of first material (e.g., copper) while one or more portions of the second material (e.g., copper oxide) remain. One or more portions of the remaining second material (e.g., copper oxide) are removed selectively relative to converted portions of first material (e.g., copper). Further, a thickness of the converted portions may be increased. Yet further, a diffusion barrier layer may be used for certain applications.
US Patent 07153775 Conductive material patterning methods US Patent 7153775 Conductive material patterning methods
US Patent 07153775 Conductive material patterning methods
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