Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Nobutoshi Aoki0
Ichiro Mizushima0
Katsuyuki Sekine0
Koichi Kato0
Date of Patent
January 9, 2007
0Patent Application Number
110202710
Date Filed
December 27, 2004
0Patent Primary Examiner
Patent abstract
An aspect of the present invention includes; a silicon oxynitride film having an oxynitride layer which is formed on at least the surface of a silicon substrate and in which nitrogen atoms are in a three-coordinate bond state, and a silicon oxide layer which is formed between said oxynitride layer and said silicon substrate.
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