US Patent 7160818 Semiconductor device and method for fabricating same
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Patent Inventor Names
Ichiro Mizushima0
Katsuyuki Sekine0
Koichi Kato0
Nobutoshi Aoki0
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Patent abstract
An aspect of the present invention includes; a silicon oxynitride film having an oxynitride layer which is formed on at least the surface of a silicon substrate and in which nitrogen atoms are in a three-coordinate bond state, and a silicon oxide layer which is formed between said oxynitride layer and said silicon substrate.
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US Patent 07160818 Semiconductor device and method for fabricating same US Patent 7160818 Semiconductor device and method for fabricating same
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Patent Number
071608180
Patent Number
71608180
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Patent Jurisdiction
Patent Number
071608180
Date of Patent
January 9, 2007
0Patent Application Number
110202710
Date Filed
December 27, 2004
0Official Website
Patent Primary Examiner
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US Patent 07160818 Semiconductor device and method for fabricating same
Infobox
Is a
Patent jurisdiction
Patent number
07160818
Date of patent
January 9, 2007
Patent application number
11020271
Date Filed
December 27, 2004
Patent primary examiner
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