Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Keishin Handa0
Yoshimasa Sakai0
Shinji Aramaki0
Masahiro Kobashi0
Date of Patent
January 16, 2007
0Patent Application Number
110451570
Date Filed
January 31, 2005
0Patent Primary Examiner
Patent abstract
A field effect transistor comprising, as provided on a support substrate, an insulation layer, a gate electrode and an organic semiconductor layer separated by the insulation layer, a source electrode and a drain electrode provided so as to contact the organic semiconductor layer, wherein elongation ε1 (%) at the yield point of the insulation layer is larger than elongation ε2 (%) at the yield point of the support substrate.
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