US Patent 7164190 Field effect transistor

A field effect transistor comprising, as provided on a support substrate, an insulation layer, a gate electrode and an organic semiconductor layer separated by the insulation layer, a source electrode and a drain electrode provided so as to contact the organic semiconductor layer, wherein elongation ε1 (%) at the yield point of the insulation layer is larger than elongation ε2 (%) at the yield point of the support substrate.