US Patent 7166185 Forming system for insulation film

Patent 7166185 was granted and assigned to Tokyo Electron on January, 2007 by the United States Patent and Trademark Office.

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Patent Number

Patent Inventor Names

Shigemi Murakawa0

Toshio Nakanishi0

Toshikazu Kumai0

Date of Patent

January 23, 2007

Patent Application Number

104879860

Date Filed

August 29, 2002

Patent Primary Examiner

Patent abstract

The silicon oxide film (106) and silicon nitride film (107) are formed by microwave plasma processing with a radial line slot antenna.

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