US Patent 7166185 Forming system for insulation film
Patent 7166185 was granted and assigned to Tokyo Electron on January, 2007 by the United States Patent and Trademark Office.
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Patent Inventor Names
Shigemi Murakawa0
Toshikazu Kumai0
Toshio Nakanishi0
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Patent abstract
The silicon oxide film (106) and silicon nitride film (107) are formed by microwave plasma processing with a radial line slot antenna.
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Official Website
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US Patent 07166185 Forming system for insulation film US Patent 7166185 Forming system for insulation film
Infobox
Patent Number
071661850
Patent Number
71661850
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071661850
Date of Patent
January 23, 2007
0Patent Application Number
104879860
Date Filed
August 29, 2002
0Official Website
Patent Primary Examiner
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US Patent 07166185 Forming system for insulation film
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07166185
Date of patent
January 23, 2007
Patent application number
10487986
Date Filed
August 29, 2002
Patent primary examiner
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