US Patent 7166893 Semiconductor integrated circuit device

Patent 7166893 was granted and assigned to Renesas Technology Corp on January, 2007 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

71668930

Patent Inventor Names

Kenichi Kuroda0

Shuji Ikeda0

Shoji Shukuri0

Yasuhiro Taniguchi0

Takashi Hashimoto0

Date of Patent

January 23, 2007

Patent Application Number

102521010

Date Filed

September 23, 2002

Patent Primary Examiner

‌

Jerome Jackson

Patent abstract

A MISFET capable of a high speed operation includes a metal silicide layer in a high concentration region aligned with a gate side wall layer on a self-alignment basis. A MISFET which can be driven at a high voltage includes an LDD portion having a width greater than the width of the side wall layer, a high concentration region in contact with the LDD portion and a metal silicide layer in the high concentration region.

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