US Patent 7166893 Semiconductor integrated circuit device

Patent 7166893 was granted and assigned to Renesas Technology Corp on January, 2007 by the United States Patent and Trademark Office.

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Patent Inventor Names

Kenichi Kuroda1

Shoji Shukuri1

Shuji Ikeda1

Takashi Hashimoto1

Yasuhiro Taniguchi1

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Patent abstract

A MISFET capable of a high speed operation includes a metal silicide layer in a high concentration region aligned with a gate side wall layer on a self-alignment basis. A MISFET which can be driven at a high voltage includes an LDD portion having a width greater than the width of the side wall layer, a high concentration region in contact with the LDD portion and a metal silicide layer in the high concentration region.

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Official Website

https://pdfpiw.uspto.gov/.piw?Docid=071668931

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