Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
January 30, 2007
Patent Application Number
11148505
Date Filed
June 9, 2005
Patent Primary Examiner
Patent abstract
A dielectric film containing HfO2/ZrO2 nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is formed by atomic layer deposition of HfO2 using a HfI4 precursor followed by the formation of ZrO2 on the HfO2 layer.
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