US Patent 7169673 Atomic layer deposited nanolaminates of HfO
Patent 7169673 was granted and assigned to Micron Technology on January, 2007 by the United States Patent and Trademark Office.
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Patent abstract
A dielectric film containing HfO2/ZrO2 nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is formed by atomic layer deposition of HfO2 using a HfI4 precursor followed by the formation of ZrO2 on the HfO2 layer.
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US Patent 07169673 Atomic layer deposited nanolaminates of HfO US Patent 7169673 Atomic layer deposited nanolaminates of HfO
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Patent Number
0716967300
Patent Number
716967300
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071696730
Date of Patent
January 30, 2007
0Patent Application Number
111485050
Date Filed
June 9, 2005
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071696730
Date of Patent
January 30, 2007
0Patent Application Number
111485050
Date Filed
June 9, 2005
0Official Website
Patent Primary Examiner
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US Patent 07169673 Atomic layer deposited nanolaminates of HfO
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07169673
Date of patent
January 30, 2007
Patent application number
11148505
Date Filed
June 9, 2005
Patent primary examiner
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