US Patent 7179752 Dry etching method

Patent 7179752 was granted and assigned to Tokyo Electron on February, 2007 by the United States Patent and Trademark Office.

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Patent Inventor Names

Akitaka Shimizu0

Akiteru Koh0

Hiromi Oka0

Takashi Enomoto0

Takashi Tsuruta0

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Patent abstract

A dry etching method involves plasma etching an organic anti-reflecting coating film through a mask layer made of photoresist and having a predetermined pattern by using an etching gas of CF4 and O2. The method allows an organic anti-reflecting coating film to be etched such that the etched film exhibits a side wall portion having a better shape as compared with that formed by a conventional technique.

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