Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
February 27, 2007
Patent Application Number
10380806
Date Filed
August 30, 2001
Patent Primary Examiner
Patent abstract
A single crystal silicon, ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect, is substantially free of oxidation induced stacking faults and is nitrogen doped to stabilize oxygen precipitation nuclei therein, and a process for the preparation thereof.
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