Patent 7182809 was granted and assigned to MEMC Electronic Materials on February, 2007 by the United States Patent and Trademark Office.
A single crystal silicon, ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect, is substantially free of oxidation induced stacking faults and is nitrogen doped to stabilize oxygen precipitation nuclei therein, and a process for the preparation thereof.