Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Mark Jon Loboda0
Byung Keun Hwang0
Date of Patent
March 13, 2007
0Patent Application Number
105436720
Date Filed
January 26, 2004
0Patent Primary Examiner
Patent abstract
A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.
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