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US Patent 7189664 Method for producing hydrogenated silicon-oxycarbide films

Patent 7189664 was granted and assigned to Dow Corning on March, 2007 by the United States Patent and Trademark Office.

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Patent Inventor Names
Byung Keun Hwang0
Mark Jon Loboda0
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Patent abstract

A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.

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US Patent 07189664 Method for producing hydrogenated silicon-oxycarbide films US Patent 7189664 Method for producing hydrogenated silicon-oxycarbide films

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Patent Number
071896640
Patent Number
71896640
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=071896640
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Infobox
Is a
Patent
Patent
0
Current Assignee
Dow Corning
Dow Corning
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
071896640
Date of Patent
March 13, 2007
0
Patent Application Number
105436720
Date Filed
January 26, 2004
0
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=071896640
Patent Primary Examiner
‌
Michael Lebentritt
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=07189664
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 US Patent 07189664 Method for producing hydrogenated silicon-oxycarbide films

Infobox
Is a
Patent
Patent
Current assignee
Dow Corning
Dow Corning
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
07189664
Date of patent
March 13, 2007
Patent application number
10543672
Date Filed
January 26, 2004
Patent primary examiner
‌
Michael Lebentritt

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