Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Stuart S. Parkin0
Gang Xiao0
Roger H. Koch0
Snorri T. Ingvarsson0
Date of Patent
March 20, 2007
Patent Application Number
10195178
Date Filed
July 15, 2002
Patent Primary Examiner
Patent abstract
In order to dampen magnetization changes in magnetic devices, such as magnetic tunnel junctions (MTJ) used in high speed Magnetic Random Access Memory (MRAM), a transition metal selected from the 4d transition metals and 5d transition metals is alloyed into the magnetic layer to be dampened. In a preferred form, a magnetic permalloy layer is alloyed with osmium (Os) in an atomic concentration of between 4% and 15% of the alloy.
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