US Patent 7192491 Increased damping of magnetization in magnetic materials
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Patent Inventor Names
Gang Xiao0
Roger H. Koch0
Snorri T. Ingvarsson0
Stuart S. Parkin0
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Patent abstract
In order to dampen magnetization changes in magnetic devices, such as magnetic tunnel junctions (MTJ) used in high speed Magnetic Random Access Memory (MRAM), a transition metal selected from the 4d transition metals and 5d transition metals is alloyed into the magnetic layer to be dampened. In a preferred form, a magnetic permalloy layer is alloyed with osmium (Os) in an atomic concentration of between 4% and 15% of the alloy.
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US Patent 07192491 Increased damping of magnetization in magnetic materials US Patent 7192491 Increased damping of magnetization in magnetic materials
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Patent Number
07192491
Patent Number
7192491
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US Patent 07192491 Increased damping of magnetization in magnetic materials
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Patent jurisdiction
Patent number
07192491
Date of patent
March 20, 2007
Patent application number
10195178
Date Filed
July 15, 2002
Patent primary examiner
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