US Patent 7192838 Method of producing complementary SiGe bipolar transistors
Patent 7192838 was granted and assigned to Texas Instruments on March, 2007 by the United States Patent and Trademark Office.
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Patent Inventor Names
Badih El-Kareh0
Philipp Steinmann0
Scott Balster0
Thomas Scharnagl0
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Patent abstract
Method of producing complementary SiGe bipolar transistors. In a method of producing complementary SiGe bipolar transistors, interface oxide layers (38, 58) for NPN and PNP emitters (44, 64), are separately formed and emitter polysilicon (40, 60) is separately patterned, allowing these layers to be optimized for the respective conductivity type.
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US Patent 07192838 Method of producing complementary SiGe bipolar transistors US Patent 7192838 Method of producing complementary SiGe bipolar transistors
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Patent Number
071928380
Patent Number
71928380
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Current Assignee
Patent Jurisdiction
Patent Number
071928380
Date of Patent
March 20, 2007
0Patent Application Number
109286550
Date Filed
August 26, 2004
0Official Website
Patent Primary Examiner
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US Patent 07192838 Method of producing complementary SiGe bipolar transistors
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07192838
Date of patent
March 20, 2007
Patent application number
10928655
Date Filed
August 26, 2004
Patent primary examiner
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