Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 3, 2007
Patent Application Number
10446078
Date Filed
May 28, 2003
Patent Primary Examiner
Patent abstract
An impurity is ion-implanted with a silicon nitride film formed on a silicon substrate as a mask film to form a source/drain layer of a MOS transistor. Heat treatment for activating the impurity is done as it is without removing the silicon nitride film to thereby produce heat treatment-based stress between the silicon nitride film and the silicon substrate.
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