US Patent 7199030 Method of manufacturing semiconductor device
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Patent abstract
An impurity is ion-implanted with a silicon nitride film formed on a silicon substrate as a mask film to form a source/drain layer of a MOS transistor. Heat treatment for activating the impurity is done as it is without removing the silicon nitride film to thereby produce heat treatment-based stress between the silicon nitride film and the silicon substrate.
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US Patent 07199030 Method of manufacturing semiconductor device US Patent 7199030 Method of manufacturing semiconductor device
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Patent Number
0719903000
Patent Number
719903000
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Official Website
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Patent Jurisdiction
Patent Number
071990300
Date of Patent
April 3, 2007
0Patent Application Number
104460780
Date Filed
May 28, 2003
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
071990300
Date of Patent
April 3, 2007
0Patent Application Number
104460780
Date Filed
May 28, 2003
0Official Website
Patent Primary Examiner
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Golden AI
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US Patent 07199030 Method of manufacturing semiconductor device
Infobox
Is a
Patent jurisdiction
Patent number
07199030
Date of patent
April 3, 2007
Patent application number
10446078
Date Filed
May 28, 2003
Patent primary examiner
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