US Patent 7199064 Plasma processing method and apparatus
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Patent Inventor Names
Bunji Mizuno0
Ichiro Nakayama0
Satoshi Maeshima0
Tomohiro Okumura0
Yuichiro Sasaki0
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Patent abstract
With evacuation of an interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to a substrate surface.
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US Patent 07199064 Plasma processing method and apparatus US Patent 7199064 Plasma processing method and apparatus
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Patent Number
071990640
Patent Number
71990640
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Patent Jurisdiction
Patent Number
071990640
Date of Patent
April 3, 2007
0Patent Application Number
109353120
Date Filed
September 8, 2004
0Official Website
Patent Primary Examiner
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US Patent 07199064 Plasma processing method and apparatus
Infobox
Is a
Patent jurisdiction
Patent number
07199064
Date of patent
April 3, 2007
Patent application number
10935312
Date Filed
September 8, 2004
Patent primary examiner
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