Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Toru Kurosaki0
Kosuke Ohshima0
Mizue Kitada0
Shinji Kunori0
Hiroaki Shishido0
Date of Patent
April 24, 2007
Patent Application Number
10967657
Date Filed
October 19, 2004
Patent Primary Examiner
Patent abstract
A technique for improving a ruggedness of a transistor against breakdown is provided. In a transistor of the present invention, a height of filling regions is higher than that of buried regions, so that a withstanding voltage of the filling regions is higher than that of the buried regions. Therefore, since avalanche breakdown occurs in an active region, causing an avalanche breakdown current to flow through the active region having a large area, current concentration does not occur. As a result, a ruggedness of an element against breakdown is increased.
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