US Patent 7208382 Semiconductor device with high conductivity region using shallow trench

Patent 7208382 was granted and assigned to Advanced Micro Devices on April, 2007 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee

Advanced Micro Devices

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7208382

Date of Patent

April 24, 2007

Patent Application Number

10151595

Date Filed

May 16, 2002

Patent Primary Examiner

‌

Carl Whitehead, Jr.

Patent abstract

A method and structure is provided for an integrated circuit with a semiconductor substrate having an opening provided therein. A doped high conductivity region is formed from doped material in the opening and a diffused dopant region proximate the doped material in the opening. A structure is over the doped high conductivity region selected from a group consisting of a wordline, a gate, a dielectric layer, and a combination thereof.

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