Patent 7211473 was granted and assigned to Advanced Micro Devices on May, 2007 by the United States Patent and Trademark Office.
A method for forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. Source/drain junctions are formed in the semiconductor substrate adjacent the gate. A facet is formed in at least one of the source/drain junctions of the integrated circuit.