Patent 7214602 was granted and assigned to Micron Technology on May, 2007 by the United States Patent and Trademark Office.
A method of forming a conductive structure is disclosed. The method includes forming an interconnect in a substrate, and forming a layer of iridium on the interconnect. The layer of iridium has a thickness of less than six hundred angstroms. The method further includes annealing the layer of iridium, forming a dielectric layer on the layer of iridium, and forming a conductive layer on the dielectric layer.