US Patent 7229693 Low defect density, ideal oxygen precipitating silicon

Patent 7229693 was granted and assigned to MEMC Electronic Materials on June, 2007 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

MEMC Electronic Materials

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

72296930

Patent Inventor Names

Paolo Mutti0

Robert J. Falster0

Seamus A. McQuaid0

Steve A. Markgraf0

Bayard K. Johnson0

Daniela Gambaro0

Joseph C. Holzer0

Marco Cornara0

...

Date of Patent

June 12, 2007

Patent Application Number

110589960

Date Filed

February 16, 2005

Patent Primary Examiner

‌

Cathy Lam

Patent abstract

The present invention is directed to a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects.

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