US Patent 7229693 Low defect density, ideal oxygen precipitating silicon
Patent 7229693 was granted and assigned to MEMC Electronic Materials on June, 2007 by the United States Patent and Trademark Office.
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Patent Inventor Names
Bayard K. Johnson0
Daniela Gambaro0
Joseph C. Holzer0
Marco Cornara0
Massimiliano Olmo0
Paolo Mutti0
Robert J. Falster0
Seamus A. McQuaid0
Steve A. Markgraf0
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Patent abstract
The present invention is directed to a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects.
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US Patent 07229693 Low defect density, ideal oxygen precipitating silicon US Patent 7229693 Low defect density, ideal oxygen precipitating silicon
Infobox
Patent Number
072296930
Patent Number
72296930
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Is a
Current Assignee
Patent Jurisdiction
Patent Number
072296930
Date of Patent
June 12, 2007
0Patent Application Number
110589960
Date Filed
February 16, 2005
0Official Website
Patent Primary Examiner
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US Patent 07229693 Low defect density, ideal oxygen precipitating silicon
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07229693
Date of patent
June 12, 2007
Patent application number
11058996
Date Filed
February 16, 2005
Patent primary examiner
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