Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shinsuke Fujiwara0
Date of Patent
June 19, 2007
Patent Application Number
10908922
Date Filed
June 1, 2005
Patent Primary Examiner
Patent abstract
AlGaInN single-crystal wafer with alleviated cracking and improved utilization rate and cost effectiveness. A hexagonal AlxGayIn1−(x+y)N(0<x≦1, 0≦y<1, x+y≦1) single-crystal wafer, characterized in that the wafer has a thickness T(cm) and a principal face with a surface area S(cm2), the area S and thickness T satisfying the conditions S≧10 cm2 and 0.006S≧T≧0.002S.
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