US Patent 7232555 AIGaInN single-crystal wafer

Patent 7232555 was granted and assigned to Sumitomo Electric Industries on June, 2007 by the United States Patent and Trademark Office.

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Patent Inventor Names

Shinsuke Fujiwara0

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Patent abstract

AlGaInN single-crystal wafer with alleviated cracking and improved utilization rate and cost effectiveness. A hexagonal AlxGayIn1−(x+y)N(0<x≦1, 0≦y<1, x+y≦1) single-crystal wafer, characterized in that the wafer has a thickness T(cm) and a principal face with a surface area S(cm2), the area S and thickness T satisfying the conditions S≧10 cm2 and 0.006S≧T≧0.002S.

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https://pdfpiw.uspto.gov/.piw?Docid=07232555

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