Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
David Q. Wright0
Steven T. Harshfield0
Date of Patent
June 26, 2007
Patent Application Number
11302119
Date Filed
December 14, 2005
Patent Primary Examiner
Patent abstract
An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver. Chalcogenide material is disposed over the plated electrode and subjected to a conversion process so that ions from the plated material diffuse into the chalcogenide material.
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