US Patent 7235419 Method of making a memory cell
Patent 7235419 was granted and assigned to Micron Technology on June, 2007 by the United States Patent and Trademark Office.
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Patent Inventor Names
David Q. Wright0
Steven T. Harshfield0
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Article (+328 characters)
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Patent abstract
An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver. Chalcogenide material is disposed over the plated electrode and subjected to a conversion process so that ions from the plated material diffuse into the chalcogenide material.
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US Patent 07235419 Method of making a memory cell US Patent 7235419 Method of making a memory cell
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Patent Number
07235419
Patent Number
7235419
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US Patent 07235419 Method of making a memory cell
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Is a
Current assignee
Patent jurisdiction
Patent number
07235419
Date of patent
June 26, 2007
Patent application number
11302119
Date Filed
December 14, 2005
Patent primary examiner
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