US Patent 7255746 Nitrogen sources for molecular beam epitaxy
Patent 7255746 was granted and assigned to Finisar on August, 2007 by the United States Patent and Trademark Office.
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Patent Inventor Names
James K. Guenter0
Jin K. Kim0
Ralph H. Johnson0
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Patent abstract
MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline subtrates using MBE. Semiconductor lasers in general, and VCSEL in particular, that have nitrogen-containing layers can be formed using such nitrogen sources.
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US Patent 07255746 Nitrogen sources for molecular beam epitaxy US Patent 7255746 Nitrogen sources for molecular beam epitaxy
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Patent Number
072557460
Patent Number
72557460
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Current Assignee
Patent Jurisdiction
Patent Number
072557460
Date of Patent
August 14, 2007
0Patent Application Number
102336250
Date Filed
September 4, 2002
0Official Website
Patent Primary Examiner
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US Patent 07255746 Nitrogen sources for molecular beam epitaxy
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07255746
Date of patent
August 14, 2007
Patent application number
10233625
Date Filed
September 4, 2002
Patent primary examiner
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