Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Mei Chang0
Seshadri Ganguli0
Vincent W. Ku0
Alan Ouye0
Christophe Marcadal0
Dien-Yeh Wu0
Hua Chung0
Jenny Lin0
...
Date of Patent
September 18, 2007
0Patent Application Number
111196810
Date Filed
May 2, 2005
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The precursor is generated in a canister coupled to a heating element configured to reduce formation of impurities.
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