US Patent 7274065 Source lines for NAND memory devices
Patent 7274065 was granted and assigned to Micron Technology on September, 2007 by the United States Patent and Trademark Office.
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Patent Inventor Names
Mark A. Helm0
Roger W. Lindsay0
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Patent abstract
A NAND memory device has a source line connected to two or more columns of serially-connected floating-gate transistors. The source line includes a first conductive layer formed on a substrate and coupled to source select gates associated with the two or more columns of serially-connected floating-gate transistors. The source line also includes a second conductive layer formed on the first conductive layer, where the second layer has a greater electrical conductivity than the first conductive layer.
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US Patent 07274065 Source lines for NAND memory devices US Patent 7274065 Source lines for NAND memory devices
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Patent Number
072740650
Patent Number
72740650
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Is a
Current Assignee
Patent Jurisdiction
Patent Number
072740650
Date of Patent
September 25, 2007
0Patent Application Number
112094870
Date Filed
August 23, 2005
0Official Website
Patent Primary Examiner
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US Patent 07274065 Source lines for NAND memory devices
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07274065
Date of patent
September 25, 2007
Patent application number
11209487
Date Filed
August 23, 2005
Patent primary examiner
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