Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
October 9, 2007
Patent Application Number
10838215
Date Filed
May 5, 2004
Patent Primary Examiner
Patent abstract
A non-volatile memory device includes a substrate, an insulating layer, a fin structure, a floating gate, an inter-gate dielectric and a control gate. The insulating layer is formed on the substrate and the fin structure is formed on the insulating layer. The fin structure may include a strained layer formed on a non-strained layer.
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