Patent 7279735 was granted and assigned to Spansion on October, 2007 by the United States Patent and Trademark Office.
A non-volatile memory device includes a substrate, an insulating layer, a fin structure, a floating gate, an inter-gate dielectric and a control gate. The insulating layer is formed on the substrate and the fin structure is formed on the insulating layer. The fin structure may include a strained layer formed on a non-strained layer.