Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
October 16, 2007
Patent Application Number
11172696
Date Filed
July 1, 2005
Patent Primary Examiner
Patent abstract
A high-reliable depletion-type MOS field-effect transistor as a process monitor is provided. A diode formed in polycrystalline silicon and a diode formed in a semiconductor substrate form a bi-directional diode. The bi-directional diode connects a gate electrode with the semiconductor substrate in the depletion-type MOS field-effect transistor through metal wirings.
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